? 2013 ixys corporation, all rights reserved 600v xpt tm igbt genx3 tm v ces = 600v i c110 = 150a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.5v t fi(typ) = 75ns symbol test conditions maximum ratings v ces t j = 25c to 175c 600 v v cgr t j = 25c to 175c, r ge = 1m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 300 a i lrms terminal current limit 160 a i c110 t c = 110c 150 a i cm t c = 25c, 1ms 700 a i a t c = 25c 75 a e as t c = 25c 750 mj ssoa v ge = 15v, t vj = 150c, r g = 2 ? i cm = 300 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 10 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 1360 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in weight 6g ds100558(8/13) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 600 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.5 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 1 ma i ges v ce = 0v, v ge = ? 20v ???????????????? 200 na v ce(sat) i c = 150a, v ge = 15v, note 1 2.1 2.5 v t j = 150 ? c 2.6 v advance technical information features ? international standard package ? optimized for 20-60khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? high current handling capability advantages ? high power density ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts extreme light punch through igbt for 20-60khz switching IXXH150N60C3 g = gate c = collector e = emitter tab = collector to-247 ad g c e tab
ixys reserves the right to change limits, test conditions, and dimensions. IXXH150N60C3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 27 45 s c ie s 6460 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 403 pf c res 138 pf q g(on) 200 nc q ge i c = 150a, v ge = 15v, v ce = 0.5 ? v ces 52 nc q gc 80 nc t d(on) 34 ns t ri 70 ns e on 3.4 mj t d(off) 120 ns t fi 75 ns e of f 1.8 mj t d(on) 32 ns t ri 68 ns e on 3.9 mj t d(off) 150 ns t fi 80 ns e off 2.2 mj r thjc 0.11 c/w r thcs 0.21 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 75a, v ge = 15v v ce = 400v, r g = 2 ? note 2 inductive load, t j = 25c i c = 75a, v ge = 15v v ce = 400v, r g = 2 ? note 2 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. 1 - gate 2,4 - collector 3 - emitter to-247 (ixxh) outline
? 2013 ixys corporation, all rights reserved IXXH150N60C3 fig. 1. output characteristics @ t j = 25oc 0 50 100 150 200 250 300 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 9v 11v 7v 8v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 v ce - volts i c - amperes v ge = 15v 13v 10v 11v 12v 8v 9v 7v fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 00.511.522.533.544.555.5 v ce - volts i c - amperes v ge = 15v 14v 13v 10v 8v 9v 6v 11v 12v fig. 4. dependence of v ce(sat) on junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 150a i c = 75a i c = 300a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 300a t j = 25oc 150a 75a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4567891011 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXXH150N60C3 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 12. maximum trasient thermal impedance aaa 1.0 fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 50 100 150 200 250 300 350 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 200 220 q g - nanocoulombs v ge - volts v ce = 300v i c = 150a i g = 10ma fig. 9. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 11. forward-bias safe operating area 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms v ce(sat) limi t 100s 10ms
? 2013 ixys corporation, all rights reserved IXXH150N60C3 fig. 13. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 2468101214 r g - ohms e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 60 70 80 90 100 110 120 130 140 2 4 6 8 101214 r g - ohms t f i - nanoseconds 100 150 200 250 300 350 400 450 500 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 17. inductive turn-off switching times vs. collector current 50 60 70 80 90 100 110 120 130 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanosecond s 100 110 120 130 140 150 160 170 180 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 18. inductive turn-off switching times vs. junction temperature 60 70 80 90 100 110 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 90 110 130 150 170 190 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXXH150N60C3 ixys ref: ixx_150n60c3(8d) 8-20-13 fig. 20. inductive turn-on switching times vs. collector current 10 30 50 70 90 110 130 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanosecond s 28 30 32 34 36 38 40 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 28 30 32 34 36 38 40 42 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 2468101214 r g - ohms t r i - nanosecond s 10 20 30 40 50 60 70 80 90 100 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 50a i c = 100a
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